Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min)
High DC Current Gain
: hFE= 500(Min) @IC= 4A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Igniter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCB
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1113
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min) ·High DC Current Gain
: hFE= 500(Min) @IC= 4A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Igniter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
10
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SD1113 Datasheet
