Datasheet4U Logo Datasheet4U.com

2SD1162 - Silicon NPN Darlington Power Transistor

Description

High DC Current Gain- : hFE= 400(Min.)@IC= 2A High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

use.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1160 NPN TRANSISTOR Toshiba Semiconductor
2SD1163 NPN TRANSISTOR Hitachi Semiconductor
2SD1163 NPN Transistor INCHANGE
2SD1163 SILICON POWER TRANSISTOR SavantIC
2SD1163 Silicon NPN Transistor Renesas

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1113 Silicon NPN Power Transistor
2SD1117 Silicon NPN Power Transistor
2SD1118 Silicon NPN Power Transistor
2SD1126 Silicon NPN Darlington Power Transistor
2SD1127 Power Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Darlington Power Transistor 2SD1162 DESCRIPTION ·High DC Current Gain- : hFE= 400(Min.)@IC= 2A ·High Switching Speed ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 5 A ICM Base Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.5 A 40 W 1.
Published: |