Download 2SD1162 Datasheet PDF
Inchange Semiconductor
2SD1162
DESCRIPTION - High DC Current Gain- : h FE= 400(Min.)@IC= 2A - High Switching Speed - Low Collector Saturation Voltage - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for high voltage, low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ Junction Temperature 40...