Datasheet Details
| Part number | 2SD1162 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.38 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
 2SD1162_InchangeSemiconductor.pdf
|
| Part number | 2SD1162 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.38 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
2SD1162_InchangeSemiconductor.pdf
|
High DC Current Gain- : hFE= 400(Min.)@IC= 2A High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, low speed switching industrial use.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 5
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