Datasheet Details
| Part number | 2SD1171 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.60 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SD1171 Datasheet
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| Part number | 2SD1171 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.60 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SD1171 Datasheet
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 4.0V(Max.)@ IC= 2.0A ·Built-in Damper Diode ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage(VBE= 0) 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 4.5 A 50 W 130 ℃ Tstg Storage Temperature Range -65~130 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1171 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1171.
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