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2SD1187 - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 6.0A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applica

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1187 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 6.