Datasheet Details
| Part number | 2SD1269 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.18 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SD1269 Datasheet
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| Part number | 2SD1269 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.18 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SD1269 Datasheet
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·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·Complement to Type 2SB944 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 8 A 35 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1269 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
isc Silicon NPN Power Transistor 2SD1269.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1269 | Silicon NPN Transistor | Panasonic Semiconductor |
| Part Number | Description |
|---|---|
| 2SD1233 | Power Transistor |
| 2SD1245 | Silicon NPN Power Transistor |
| 2SD1248 | Power Transistor |
| 2SD1298 | Silicon NPN Transistor |
| 2SD103 | Silicon NPN Power Transistors |
| 2SD1032 | Silicon NPN Power Transistor |
| 2SD1044 | Silicon NPN Darlington Power Transistor |
| 2SD1071 | Silicon NPN Transistor |
| 2SD1113 | Silicon NPN Power Transistor |
| 2SD1117 | Silicon NPN Power Transistor |