Datasheet Details
| Part number | 2SD1298 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.83 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SD1298 Datasheet
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| Part number | 2SD1298 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.83 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SD1298 Datasheet
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·High DC Current Gain : hFE= 200(Min.)@ IC= 6A, VCE= 2V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 20 A 100 W 3.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A, IB= 60mA VBE(sat) Base-Emitter Saturation Voltage IC= 6A, IB= 60mA ICBO Collector Cutoff current VCB= 400V, IE= 0 IEBO Emitter Cutoff Current VEB= 8V;
IC= 0 hFE DC Current Gain IC= 6A;
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