Datasheet Details
| Part number | 2SD1314 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.15 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SD1314 Datasheet
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| Part number | 2SD1314 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.15 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SD1314 Datasheet
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·High DC Current Gain :hFE= 100(Min) @ IC= 15A ·Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 450V (Min) ·Fast Switching Speed ·Low Collector-Emitter Saturation Voltage- :VCE(sat)= 2.0V (Max) @ IC= 15A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICM Collector Current-peak IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 600 V 450 V 6 V 15 A 30 A 1.0 A 150 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1314 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1314 | NPN Transistor | Toshiba Semiconductor |
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