Datasheet Details
| Part number | 2SD1338 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.61 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SD1338 Datasheet
|
|
|
| Part number | 2SD1338 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.61 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SD1338 Datasheet
|
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 2.5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 8 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1338 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
isc Silicon NPN Power Transistor.
| Part Number | Description |
|---|---|
| 2SD1336 | Power Transistor |
| 2SD1314 | Silicon NPN Transistor |
| 2SD1340 | Silicon NPN Transistor |
| 2SD1342 | Silicon NPN Transistor |
| 2SD1345 | Power Transistor |
| 2SD1351 | Silicon NPN Power Transistors |
| 2SD1371 | Silicon NPN Transistor |
| 2SD1378 | Power Transistor |
| 2SD1390 | Power Transistor |
| 2SD103 | Silicon NPN Power Transistors |