Datasheet Details
| Part number | 2SD1516 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.01 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SD1516 Datasheet
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| Part number | 2SD1516 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.01 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SD1516 Datasheet
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·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching Speed ·High IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier ,power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 1.4 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD1516 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 2A ;IB= 0.1A ICBO Collector Cutoff Current VCB= 100V;
IE= 0 IEBO Emitter Cutoff Current VEB= 5V;
isc Silicon NPN Power Transistor.
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| 2SD1500 | Power Transistor |
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| 2SD1528 | Silicon NPN Power Transistor |
| 2SD1530 | Power Transistor |
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| 2SD1533 | Silicon NPN Transistor |
| 2SD1543 | Power Transistor |