2SD1516 transistor equivalent, silicon npn transistor.
*Designed for power amplifier ,power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
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*Low Collector Saturation Voltage
*Good Linearity of hFE
*High Switching Speed
*High IC
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for power amplifier ,power swit.
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