Datasheet Details
| Part number | 2SD1533 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.36 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SD1533 Datasheet
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| Part number | 2SD1533 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.36 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SD1533 Datasheet
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·Collector-Base Breakdown Voltage- : V(BR)CBO = 500V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 12 V IC Collector Current 7 A ICM Collector Current-peak 14 A IB Base Current Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.5 A 1.4 W 50 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1533 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1533 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A;
isc Silicon NPN Power Transistor.
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