2SD1662 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1662 .
High DC Current Gain : hFE= 1000(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min. Low Collector Saturation V.

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Datasheet Specifications

Part number: 2SD1662
Manufacturer: Inchange Semiconductor
File Size: 123.95 KB
Datasheet: 2SD1662-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for high current switching application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 100 V 5V IC Collector Current-Continuous 15 A IB Base Current- Continuous PC Co

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2SD1662 Silicon NPN Power Transistor Inchange Semiconductor

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