Datasheet Details
| Part number | 2SD1761 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.98 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD1761_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1761 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.98 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD1761_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SB1187 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1761 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1761 | SILICON POWER TRANSISTOR | SavantIC |
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