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2SD1763A - Silicon NPN Power Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) Good Linearity of hFE Complement to Type 2SB1186A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

Driver stage amplifier appli

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Datasheet Details

Part number 2SD1763A
Manufacturer Inchange Semiconductor
File Size 213.58 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2SD1763A Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Complement to Type 2SB1186A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 2 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1763A isc website：www.iscsemi.
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