Datasheet4U Logo Datasheet4U.com

2SD1841 - Silicon NPN Power Transistor

📥 Download Datasheet

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB1231 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, relay drivers, converters and other general high-current switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 25 A ICP Collector Current-Pulse 40 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 3 W 120 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1841 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;

RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;

Overview

isc Silicon NPN Power Transistor.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Sanyo Semicon Device Logo 2SD1841 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device

More Datasheets from Inchange Semiconductor

Part Number Description
2SD180 Silicon NPN Power Transistor
2SD1801 Silicon NPN Power Transistor
2SD1802 Silicon NPN Power Transistor
2SD1803 TO-126 Silicon NPN Power Transistor
2SD1805 Silicon NPN Power Transistor
2SD1816 Silicon NPN Power Transistor
2SD1850 Power Transistor
2SD1857 Silicon NPN Power Transistor
2SD1896 Silicon NPN Power Transistor
2SD1899 Silicon NPN Power Transistor