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2SD1857 - Silicon NPN Power Transistor

Description

High breakdown voltage.

Low collector output capacitance.

High transition frequency.

Complement to Type 2SB1236 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio amplifier, volt

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Datasheet Details

Part number 2SD1857
Manufacturer Inchange Semiconductor
File Size 206.11 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2SD1857 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage. (BVCEO = 120V) ·Low collector output capacitance. ·High transition frequency. (fT = 50MHz) ·Complement to Type 2SB1236 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio amplifier, voltage regulator, and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Pulse 3 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1857 isc website：www.iscsemi.
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