2SD1896 transistor equivalent, silicon npn power transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 3A
*High Collector Power Dissipation
*Good Linearity of hFE
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed f.
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