Datasheet Details
| Part number | 2SD2033 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.03 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2SD2033 Datasheet
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| Part number | 2SD2033 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.03 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2SD2033 Datasheet
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·Good Linearity of hFE · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Complement to Type 2SB1353 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.5 A 1.8 W 15 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2033 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2033A | NPN Transistor | ROHM |
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