Datasheet Details
| Part number | 2SD2449 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.94 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
 2SD2449 Datasheet
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| Part number | 2SD2449 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.94 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
2SD2449 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·High DC Current Gain- : hFE= 3000( Min.) @(IC= 8A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max)@ (IC= 8A, IB= 8mA) ·Complement to Type 2SB1594 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 150 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2449 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD2449 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
isc Silicon NPN Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2449 | Silicon NPN Transistor | Toshiba Semiconductor |
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|---|---|
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