Datasheet Details
| Part number | 2SD2562 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.92 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Download | 2SD2562 Download (PDF) |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD2562 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.92 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Download | 2SD2562 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB= 10mA) ·Complement to Type 2SB1649 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for series regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 85 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2562 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A ,IB= 10mA VBE(sat) Base-Emitter Saturation Voltage IC= 10A ,IB= 10mA ICBO Collector Cutoff current VCB= 150V, IE= 0 IEBO Emitter Cutoff current VEB= 5V, IC= 0 hFE DC Current Gain IC= 10A;
VCE= 4V COB Output Capacitance fT Current-Gain—Bandwidth Product hFE Classifications O P Y IE= 0;
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| Brand Logo | Part Number | Description | Manufacturer |
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