2SD2562 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage-.
- Part: 2SD2562
- Manufacturer: Inchange Semiconductor
- Size: 222.92 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Sanken |
2SD2562 | Silicon NPN Transistor |