Datasheet Details
| Part number | 2SD2580 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.87 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet |
 2SD2580 Datasheet
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| Part number | 2SD2580 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.87 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet |
2SD2580 Datasheet
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 3.0 W 70 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2580 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2580 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2580 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
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2SD2580 | SILICON POWER TRANSISTOR | SavantIC |
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