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2SD5075T Datasheet Silicon NPN Power Transistors

Manufacturer: Inchange Semiconductor

General Description

¡¤With TO-220C package ¡¤High breakdown voltage ¡¤High speed switching APPLICATIONS ¡¤Color TV horizontal output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25¡æ ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25¡æ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 3.5 10 75 150 -55~150 ¡æ ¡æ UNIT V V V A A W Free Datasheet http://www.datasheet4u.com/ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER CONDITIONS MIN 2SD5075T SYMBOL TYP.

MAX UNIT VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8A 8.0 V VBEsat IEBO Base-emitter saturation voltage IC=2.5A;IB=0.8A VEB=5V;

IC=0 1.5 V Emitter cut-off current 1.0 mA ICBO Collector cut-off current VCB=800V;

Overview

Inchange Semiconductor Product Specification Silicon NPN Power Transistors.