2SD557 Description
·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...