Datasheet Details
| Part number | 2SD569 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.35 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD569 Download (PDF) |
|
|
| Part number | 2SD569 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.35 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD569 Download (PDF) |
|
|
|
·High Collector Current: IC= 7A ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A ·Complement to Type 2SB708 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature 3.5 A 40 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
isc Silicon NPN Power Transistor 2SD569.
| Part Number | Description |
|---|---|
| 2SD568 | Silicon NPN Power Transistor |
| 2SD5011 | Power Transistor |
| 2SD5070 | Power Transistor |
| 2SD5071 | Silicon NPN Power Transistors |
| 2SD5072 | Silicon NPN Power Transistors |
| 2SD5074 | Power Transistor |
| 2SD5075T | Silicon NPN Power Transistors |
| 2SD5076 | Silicon NPN Power Transistors |
| 2SD523 | Silicon NPN Darlington Power Transistor |
| 2SD525 | Silicon NPN Power Transistors |