Datasheet Details
| Part number | 2SD5703 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.67 KB |
| Description | Power Transistor |
| Download | 2SD5703 Download (PDF) |
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| Part number | 2SD5703 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.67 KB |
| Description | Power Transistor |
| Download | 2SD5703 Download (PDF) |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 30 A 70 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD5703 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD5703.
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