Datasheet Details
| Part number | 2SD861 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.47 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SD861 Datasheet
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| Part number | 2SD861 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.47 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SD861 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Power Dissipation- : PC= 45W@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 45 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD861 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A;
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