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2SD873 Datasheet Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) ·High Power Dissipation ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications.

·High power switching applications.

·DC-DC converter applications.

Overview

isc Silicon NPN Power Transistor 2SD873.