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2SD879 Datasheet Silicon NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·High Collector Current-IC= 3.0A ·Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 60mA(Pulse) ·Excellent Linearity of hFE in The Region From Low Current to High Current.

APPLICATIONS ·In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VCEX Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 3.0 A ICP Collector Current-Pulse 5.0 A PC Collector Power Dissipation 1.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Product Specification 2SD879 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD879 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCBO Collector-Base Voltage IC=10µA, IE=0 VCEO Collector-Emitter Voltage VCEX Collector-Emitter Voltage VEBO Emitter-Base Voltage IC=1mA, RBE=∞ IC=1mA, VBE=3V IE=10µA, IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A;

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor.