Datasheet Details
| Part number | 2SD960 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.21 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SD960 Datasheet
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| Part number | 2SD960 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.21 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SD960 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max) @IC= 3A ·Complement to Type 2SB868 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD960 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD960 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A;
isc Silicon NPN Power Transistor.
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