Datasheet Details
| Part number | 2SK1020 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 223.37 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
 2SK1020 Datasheet
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| Part number | 2SK1020 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 223.37 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
2SK1020 Datasheet
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·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 30 A Ptot Total Dissipation@TC=25℃ 300 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.416 ℃/W Rth j-a Thermal Resistance,Junction to Ambient ℃/W 2SK1020 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS;
isc N-Channel MOSFET Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SK1020 | N-CHANNEL SILICON POWER MOSFET | Fuji Electric |
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