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Inchange Semiconductor

2SK1212 Datasheet Preview

2SK1212 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1212
DESCRIPTION
·Drain Current ID=5A@ TC=25
·Drain Source Voltage-
: VDSS=900V(Min)
·Fast Switching Speed
APPLICATIONS
·high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
900
±20
V
V
Drain Current-continuous@ TC=255 A
Total Dissipation@TC=25
80 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.56
30
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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Inchange Semiconductor

2SK1212 Datasheet Preview

2SK1212 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1212
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2.5A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS=900V; VGS= 0
VSD Forward On-Voltage
IS=5A; VGS=0
tr Rise time
ton Turn-on time
tf Fall time
VGS=10V;ID=2.4A;
RL=50Ω
toff Turn-off time
MIN TYP. MAX UNIT
900 V
2.1 3.0 4.0 V
2.0 2.5
Ω
±100 nA
500 uA
1.0 1.5
V
80 120 ns
110 170
ns
120 180
ns
420 630
ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 2SK1212
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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