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Inchange Semiconductor

2SK1280 Datasheet Preview

2SK1280 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1280
DESCRIPTION
·Drain Current ID= 18A@ TC=25
·Drain Source Voltage-
: VDSS=500V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
Ptot Total Dissipation@TC=25
Tj Max. Operating Junction Temperature
Tstg Storage Temperature Range
VALUE
UNI
T
500 V
±20
V
18 A
150 W
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
th j-c Thermal Resistance,Junction to Case
0.83 /W
th j-a Thermal Resistance,Junction to Ambient 35.0 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn




Inchange Semiconductor

2SK1280 Datasheet Preview

2SK1280 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1280
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= 0V; ID=10mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=9A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0
VSD Diode Forward Voltage
IF=18A; VGS=0
MIN TYP MAX UNIT
500 V
2.1 3.0 4.0
V
0.35 0.50
Ω
±100 nA
500 uA
0.85 1.6
V
tr Rise time
150 220
ns
ton Turn-on time
tf Fall time
toff Turn-off time
VGS=10V;ID=18A;RL=25Ω
185 270
180 270
630 900
ns
ns
ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 2SK1280
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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