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Inchange Semiconductor

2SK1486 Datasheet Preview

2SK1486 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1486
DESCRIPTION
·Drain Current ID=32A@ TC=25
·Drain Source Voltage-
: VDSS=300 (Min)
APPLICATIONS
·High speed power switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
Ptot Total Dissipation@TC=25
Tj Max. Operating Junction Temperature
Tstg Storage Temperature Range
VALUE
UNI
T
300 V
±30
V
32 A
200 W
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
0.625 /W
Thermal Resistance,Junction to Ambient 35.7 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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Inchange Semiconductor

2SK1486 Datasheet Preview

2SK1486 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1486
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=16A
IGSS Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=300V; VGS= 0
VSD Diode Forward Voltage
IF=32A; VGS=0
tr Rise time
ton Turn-on time
tf Fall time
VGS=10V;ID=16A;RL=50Ω
toff Turn-off time
MIN TYP MAX UNIT
300 V
2.0 4.0 V
0.08 0.095
Ω
±100 nA
300 uA
1.8 V
255 ns
325 ns
280 ns
540 ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 2SK1486
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
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2SK1486 Datasheet PDF





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