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Inchange Semiconductor

2SK1548 Datasheet Preview

2SK1548 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1548
DESCRIPTION
·Drain Current ID=3.5A@ TC=25
·Drain Source Voltage-
: VDSS=900 (Min)
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
Ptot Total Dissipation@TC=25
Tj Max. Operating Junction Temperature
Tstg Storage Temperature Range
VALUE
UNI
T
900 V
±30
V
3.5 A
40 W
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
3.125 /W
Thermal Resistance,Junction to Ambient 62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn




Inchange Semiconductor

2SK1548 Datasheet Preview

2SK1548 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1548
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=0; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2A
IGSS Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=900V; VGS= 0
MIN TYP MAX UNIT
900 V
2.5 3.5 5.0
V
4.0 5.5
Ω
±100 nA
500 uA
tr Rise time
65 100 ns
ton Turn-on time
tf Fall time
VGS=10V;ID=3.5A;RL=25Ω
95 145 ns
60 90 ns
toff Turn-off time
110 255
ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 2SK1548
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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