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Inchange Semiconductor

2SK1601 Datasheet Preview

2SK1601 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1601
DESCRIPTION
·Drain Current ID= 3A@ TC=25
·Drain Source Voltage-
: VDSS=900V(Min)
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
900
±30
V
V
Drain Current-continuous@ TC=253 A
Total Dissipation@TC=25
75 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
3.125 /W
Thermal Resistance,Junction to Ambient 62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn




Inchange Semiconductor

2SK1601 Datasheet Preview

2SK1601 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1601
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
900
V
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1.5A
IGSS Gate Source Leakage Current
VGS= ±25V;VDS= 0
1.5
3.5 V
6.4 Ω
±100 nA
IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0
100 uA
VSD Diode Forward Voltage
IF=3A; VGS=0
2.0 V
tr Rise time
25 50 ns
ton Turn-on time
tf Fall time
VGS=10V;ID=1.5A;RL=267Ω
40 60 ns
40 80 ns
toff Turn-off time
150 300
ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 2SK1601
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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