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Inchange Semiconductor

2SK1611 Datasheet Preview

2SK1611 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1611
DESCRIPTION
·Drain Current ID=3A@ TC=25
·Drain Source Voltage-
: VDSS=800V(Min)
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
800
±30
V
V
Drain Current-continuous@ TC=253 A
Total Dissipation@TC=25
50 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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Inchange Semiconductor

2SK1611 Datasheet Preview

2SK1611 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1611
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=25V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2A
IGSS Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=640V; VGS= 0
ton Turn-on time
toff Turn-off time
VGS=10V;ID=2A;RL=100Ω
MIN TYP MAX UNIT
800 V
1.0 5.0 V
3.2 4.0
Ω
±1 uA
100 uA
40 ns
140 ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 2SK1611
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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