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Inchange Semiconductor

2SK1613 Datasheet Preview

2SK1613 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1613
DESCRIPTION
·Drain Current ID=5A@ TC=25
·Drain Source Voltage-
: VDSS=900V(Min)
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
DSS Drain-Source Voltage (VGS=0)
900 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=255 A
Ptot Total Dissipation@TC=25
100 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.83
35
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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Inchange Semiconductor

2SK1613 Datasheet Preview

2SK1613 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1613
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
900
V
VGS(th) Gate Threshold Voltage
VDS=25V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A
IGSS Gate Source Leakage Current
VGS= ±30V;VDS= 0
2.0 5.0 V
2.0 2.8
Ω
±1 uA
IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0
0.1 m A
ton Turn-on time
toff Turn-off time
VGS=10V;ID=3A;RL=66Ω
90
250
ns
ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 2SK1613
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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