Datasheet Details
| Part number | 2SK1643 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.93 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1643-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 2SK1643 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.93 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1643-InchangeSemiconductor.pdf |
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·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed high current switching applications ·DC-DC converter and motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 5 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.00 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 83.3 ℃/W 2SK1643 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK1643 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID= 10mA VGS(th) Gate Threshold Voltage VDS=10V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK1643 | Silicon N-Channel MOSFET | Toshiba |
| Part Number | Description |
|---|---|
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