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Inchange Semiconductor

2SK1643 Datasheet Preview

2SK1643 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1643
DESCRIPTION
·Drain Current ID=5A@ TC=25
·Drain Source Voltage-
: VDSS=900 (Min)
·Fast Switching Speed
APPLICATIONS
·high speed high current switching applications
·DC-DC converter and motor driver applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
Ptot Total Dissipation@TC=25
Tj Max. Operating Junction Temperature
Tstg Storage Temperature Range
VALUE
UNI
T
900 V
±30
V
5A
125 W
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
1.00 /W
Thermal Resistance,Junction to Ambient 83.3 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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Inchange Semiconductor

2SK1643 Datasheet Preview

2SK1643 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1643
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2A
IGSS Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0
VSD Diode Forward Voltage
IF=4A; VGS=0
tr Rise time
ton Turn-on time
tf Fall time
VGS=10V;ID=2A;RL=200Ω
toff Turn-off time
MIN TYP MAX UNIT
900 V
1.5 3.5 V
2.5 2.8
Ω
±100 nA
300 uA
1.9 V
18 35 ns
30 60 ns
12 25 ns
70 140 ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 2SK1643
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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