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Inchange Semiconductor

2SK1652 Datasheet Preview

2SK1652 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1652
DESCRIPTION
·Drain Current ID=13A@ TC=25
·Drain Source Voltage-
: VDSS=500 (Min)
APPLICATIONS
·high voltage,high speed applications,
such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
Ptot Total Dissipation@TC=25
Tj Max. Operating Junction Temperature
Tstg Storage Temperature Range
VALUE
UNI
T
500 V
±30
V
13 A
85 W
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
th j-c Thermal Resistance,Junction to Case
1.25 /W
th j-a Thermal Resistance,Junction to Ambient 35.0 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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www.fineprint.cn




Inchange Semiconductor

2SK1652 Datasheet Preview

2SK1652 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1652
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=7A
IGSS Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0
VSD Diode Forward Voltage
IF=13A; VGS=0
MIN TYP MAX UNIT
500 V
2.0 3.0 4.0
V
0.45 Ω
±100 nA
500 uA
2.0 V
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 2SK1652
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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