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Inchange Semiconductor

2SK1667 Datasheet Preview

2SK1667 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1667
DESCRIPTION
·Drain Current ID= 7A@ TC=25
·Drain Source Voltage-
: VDSS= 250V(Min)
·Fast Switching Speed
APPLICATIONS
·low onresistance
·High speed switching
·Low drive current
·No secondary breakdown
·Suitable for switchingregulator, DCDC convertor
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
250
±30
V
V
Drain Current-continuous@ TC=257 A
Total Dissipation@TC=25
50 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn




Inchange Semiconductor

2SK1667 Datasheet Preview

2SK1667 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1667
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 4A
IGSS Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=250V; VGS= 0
VSD Diode Forward Voltage
IF=7A; VGS=0
tr Rise time
ton Turn-on time
tf Fall time
VGS=10V;ID=4A;RL=7.5Ω
toff Turn-off time
MIN TYP MAX UNIT
250 V
2.0 3.0 V
0.40 0.55
Ω
±10 uA
250 uA
1.0 V
55 ns
68 ns
37 ns
122 ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 2SK1667
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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