Datasheet Details
| Part number | 2SK1699 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.27 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1699-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 2SK1699 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.27 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1699-InchangeSemiconductor.pdf |
|
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·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high Voltage ·high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 5 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1699 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID= 1mA VGS(th) Gate Threshold Voltage VDS=VGS;
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