Datasheet Details
| Part number | 2SK1767 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.20 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1767-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 2SK1767 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.20 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1767-InchangeSemiconductor.pdf |
|
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·Drain Current ID= 3.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 3.5 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1767 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK1767 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK1767 | Field Effect Transistor | Toshiba |
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