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Inchange Semiconductor

2SK1803 Datasheet Preview

2SK1803 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1803
DESCRIPTION
·Drain Current ID=8A@ TC=25
·Drain Source Voltage-
: VDSS= 900V(Min)
·Fast Switching Speed
APPLICATIONS
·Contactless relay
·Diving circuit for a solenoid
·Driving circuit for a motor
·Control equipment
·Switching power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
900 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=258 A
Ptot Total Dissipation@TC=25
100 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.25 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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Inchange Semiconductor

2SK1803 Datasheet Preview

2SK1803 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
isc Product Specification
2SK1803
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS=25V; ID=1mA
VGS= 10V; ID=4A
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 720V; VGS= 0
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
VDS=20V;
VGS=0V;
fT=1MHz
ton Turn-on Time
tf Fall Time
toff Turn-off Time
VGS=10V;
ID=4A;
VDD=200V;
RL=50Ω
MIN TYPE MAX UNIT
900 V
1.0 5.0 V
1.7 Ω
±1 µA
0.1 mA
1800
200 pF
90
100
80 ns
250
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 2SK1803
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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