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Inchange Semiconductor

2SK1805 Datasheet Preview

2SK1805 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1805
DESCRIPTION
·Drain Current ID= 7A@ TC=25
·Drain Source Voltage
: VDSS= 500V(Min)
·Fast Switching Speed
APPLICATIONS
·Chopper regulator and motor drive
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=257 A
Ptot Total Dissipation@TC=25
45 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.77 /W
62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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Inchange Semiconductor

2SK1805 Datasheet Preview

2SK1805 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
isc Product Specification
2SK1805
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 10mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= 10V; ID=1mA
VGS= 10V; ID= 4A
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
VDS=10V;
VGS=0V;
fT=1MHz
tr Rise Time
ton Turn-on Time
tf Fall Time
toff Turn-off Time
VGS=10V;
ID=4A;
VDD=200V;
RL=50Ω
MIN TYPE MAX UNIT
500 V
2 4V
0.85 Ω
±100 nA
300 µA
870 1100
75 140 pF
210 300
60
120
ns
70
200
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 2SK1805
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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