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Inchange Semiconductor

2SK1807 Datasheet Preview

2SK1807 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION
·Drain Current ID= 4A@ TC=25
·Drain Source Voltage
: VDSS= 900V(Min)
·Fast Switching Speed
isc Product Specification
2SK1807
APPLICATIONS
·High Breakdown Voltage
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
900 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=254 A
Ptot Total Dissipation@TC=25
60 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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Inchange Semiconductor

2SK1807 Datasheet Preview

2SK1807 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
isc Product Specification
2SK1807
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
V(BR)GSS Gate-Source Breakdown Voltage
VGS= 0; ID= 10mA
VDS= 0; IG= 100μA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
VDF Body to drain diode forward voltage IS = 4 A, VGS = 0
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VGS= 10V; ID= 2A
VGS= ±25V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 720V; VGS= 0
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
VDS=10V;
VGS=0V;
fT=1MHz
tr Rise Time
ton Turn-on Time
tf Fall Time
toff Turn-off Time
VGS=10V;
ID=2A;
VDD=200V;
RL=15Ω
MIN TYPE MAX UNIT
900 V
±30
V
2.0 3.0 V
0.9 V
4.0 Ω
±10 μA
250 μA
740
305 pF
150
60
15
ns
80
100
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 2SK1807
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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