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Inchange Semiconductor

2SK1833 Datasheet Preview

2SK1833 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1833
DESCRIPTION
·Drain Current ID= 2.5A@ TC=25
·Drain Source Voltage-
: VDSS=500V(Min)
·Fast Switching Speed
APPLICATIONS
·Diving circuit for a solenoid and motor
·Control equipment
·Switching power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=252.5 A
Ptot Total Dissipation@TC=25
40 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
3.125 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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Inchange Semiconductor

2SK1833 Datasheet Preview

2SK1833 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
isc Product Specification
2SK1833
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= 25V; ID=1mA
VDF Body to drain diode forward voltage IS= 2.5A, VGS = 0
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VGS= 10V; ID= 1.5A
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS=400V; VGS= 0
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
ton Turn-on Time
tf Fall Time
toff Turn-off Time
VDS=20V;
VGS=0V;
fT=1MHz
VGS=10V;
ID=1.5A;
VDD=150V;
RL=100Ω
MIN TYPE MAX UNIT
500 V
2.0 5.0 V
1.5 V
3.2 4.0 Ω
±100 nA
1 μA
300 400
20 23 pF
55 48
40
30 ns
55
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 2SK1833
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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