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Inchange Semiconductor

2SK1913 Datasheet Preview

2SK1913 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1913
DESCRIPTION
·Drain Current ID= 4A@ TC=25
·Drain Source Voltage-
: VDSS=600V(Min)
·Fast Switching Speed
APPLICATIONS
·High speed ,high current switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=254 A
Ptot Total Dissipation@TC=25
40 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
3.125 /W
Thermal Resistance, Junction to Ambient 62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn




Inchange Semiconductor

2SK1913 Datasheet Preview

2SK1913 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1913
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=250µA
600
V
VGS(th) Gate Threshold Voltage
VDS= 10V; ID=1mA
VDF Body to drain diode forward voltage IF = 4 A, VGS = 0
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VGS= 10V; ID= 2.5A
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS=600V; VGS= 0
2.1 4 V
0.92 1.41
V
0.9 1.8 Ω
±100 nA
100 µA
Ciss Input capacitance
880 1400
Crss Reverse transfer capacitance
VDS=25V;VGS=0V;fT=1MHz
40 60 pF
Coss Output capacitance
130 200
tr Rise time
ton Turn-on time
tf Fall time
VGS=10V;ID=2.5A;
VDD=200V;
RL=80Ω
25 18
40 6
ns
45 30
toff Turn-off time
130 40
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 2SK1913
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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