Datasheet4U Logo Datasheet4U.com

2SK1936 - N-Channel MOSFET Transistor

Datasheet Summary

Description

Drain Current ID= 10A@ TC=25℃ Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power

📥 Download Datasheet

Datasheet preview – 2SK1936

Datasheet Details

Part number 2SK1936
Manufacturer Inchange Semiconductor
File Size 219.19 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet 2SK1936 Datasheet
Additional preview pages of the 2SK1936 datasheet.

📁 Similar Datasheet

  • 2SK1936-01 - N-channel MOS-FET (Fuji Electric)
  • 2SK193 - N-Channel FET (NEC)
  • 2SK1930 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK1931 - VR Series Power MOSFET (Shindengen Electric Mfg.Co.Ltd)
  • 2SK1933 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
  • 2SK1933 - Silicon N Channel MOS FET (Renesas)
  • 2SK1934 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
  • 2SK1937-01 - N-channel MOS-FET (Fuji Electric)
  • 2SK1937-01 - N-Channel MOSFET (INCHANGE)
  • 2SK1938-01 - N-Channel MOSFET (INCHANGE)
Other Datasheets by Inchange Semiconductor
  • 2SK1933 - N-Channel MOSFET Transistor
  • 2SK1937 - N-Channel MOSFET Transistor
  • 2SK1938 - N-Channel MOSFET Transistor
  • 2SK1939 - N-Channel MOSFET Transistor
  • 2SK1913 - N-Channel MOSFET Transistor
  • 2SK1916 - N-Channel MOSFET Transistor
  • 2SK1917 - N-Channel MOSFET Transistor
  • 2SK1922 - N-Channel MOSFET Transistor

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator ·UPS ·DC-DC converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.
Published: |