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Inchange Semiconductor

2SK1982 Datasheet Preview

2SK1982 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1982
DESCRIPTION
·Drain Current ID= 10A@ TC=25
·Drain Source Voltage-
: VDSS=500V(Min)
·Fast Switching Speed
APPLICATIONS
·Switching regulators
·UPS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=2510 A
Ptot Total Dissipation@TC=25
50 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.5 /W
62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn




Inchange Semiconductor

2SK1982 Datasheet Preview

2SK1982 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
isc Product Specification
2SK1982
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
500
V
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
VDS= VGS; ID=1mA
VGS= 10V; ID= 5A
VGS= ±30V;VDS= 0
VDS=500V; VGS= 0
2.5 3.5 V
0.6 0.76 Ω
±100 nA
500 µA
Ciss Input capacitance
1500 220
Crss Reverse transfer capacitance
VDS=25V;VGS=0V;fT=1MHz
35 50 pF
Coss Output capacitance
160 240
tr Rise time
td(on) Turn-on delay time
tf Fall time
td(off) Turn-off delay time
VGS=10V;ID=10A;
VDD=300V;
RL=10Ω
40 60
15 25
ns
60 90
70 100
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 2SK1982
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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