Datasheet Details
| Part number | 2SK2010 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.21 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK2010-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 2SK2010 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.21 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK2010-InchangeSemiconductor.pdf |
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·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 250 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A ID(puls) Pulsed Drain Current 16 A Ptot Total Dissipation@TC=25℃ 25 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.125 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W 2SK2010 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID=1mA V(BR)GSS Gate-Source Breakdown Voltage VDS= 0;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SK2010 | N-Channel Silicon MOSFET | Sanyo Semicon Device |
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