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2SK258 - N-Channel MOSFET Transistor

Description

Drain Current ID=8A@ TC=25℃ Drain Source Voltage- : VDSS= 250V(Min) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed switching ABSOLUTE MAXIMUM

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Datasheet Details

Part number 2SK258
Manufacturer Inchange Semiconductor
File Size 227.05 KB
Description N-Channel MOSFET Transistor
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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 250 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.
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